Measurement of Optical Bandgap Energies of Semiconductors

A method for bandgap energy determination using diuse reflection is presented
and compared to the traditional integrating sphere method. We have measured the
bandgaps for ZnO, TiO2, Cu2O, Si, SnZrS3, SnZrSe3, Sn2S3, and BiCuOSe
powders with both methods and found they agree within 0.03 eV. We have
measured scattering from powder material in the infrared region of the spectrum
with a linear wavelength dependence. We have measured optical bowing of the
bandgap energies of SnZrS3-xSex system. We also take an in-depth look at the
Ocean Optics spectrometer and its components.