I will present a novel computing paradigm, based on hybrid circuits made of a conventional CMOS layer complemented with back-end memristive (short for memory and resistor) crossbar layers. The basic idea of such circuits, which is generalization of earlier proposed "CMOL" (Cmos + MOLecular-scale devices) concept, is to combine the advantages of the CMOS technology including its flexibility and high fabrication yield with those of ultra dense stackable crosspoint memristive devices. Such devices are naturally incorporated into the crossbar fabric enabling very high functional density at acceptable fabrication cost and can be effectively used in various applications. Detailed simulations have shown that proposed hybrid circuits not only can provide orders of magnitude improvements in density of digital memories and field programmable logic circuits over conventional end-of-the-roadmap counterparts, but also for the first time enable implementation of large scale neuromorphic networks for advanced information processing. The concept got significant boost after first successful experimental demonstration fabricated by integrating memristor-based crossbars onto a foundry-built CMOS platform using nanoimprint lithography. This presentation will cover various aspects of the hybrid circuits including physical models of memristive devices, circuit architecture simulations, some recent experimental results and the latest extension of original idea to three dimensional structures.
