BiCuOSe is a moderate gap p-type semiconductor that is isostructural to the transparent p-type semiconductor LaCuOSe. The electrical properties of undoped and Ca-doped BiCuOSe films grown by pulsed laser deposition will be presented. O K-edge x-ray spectroscopy measurements of both BiCuOSe and LaCuOSe will be compared with density functional theory calculations in order to elucidate the influence of the Bi 6s electrons on the optical and electronic properties of BiCuOSe.
SnS is a p-type semiconductor made from earth-abundant, non-toxic materials, with a band gap of 1.16 eV and direct absorption onset at 1.31 eV. Absorption in excess of 10^5 / cm is observed above 1.8 eV. Optical, electronic, and structural properties of strongly oriented SnS thin films grown on amorphous substrates will be presented and compared to density functional theory calculations.