Spin Dependent Recombination for Magnetic Field Sensors
Type:
SSO Seminar
Date/Time:
2009-04-22 16:00
Location:
Weniger 304
Event speaker:
Prof. Albrecht Jander, School of EECS, OSU
Title:
Spin Dependent Recombination for Magnetic Field Sensors
Contact:
Podolskiy
Abstract
It has been known since 1972 [1] that the rate of carrier recombination in semiconductors can be changed by application of a radio-frequency (RF) magnetic field at a frequency corresponding to the electron spin resonance (ESR) frequency. This spin dependent recombination (SDR) effect has been used by researchers to investigate the properties and density of recombination centers but has not yet found any direct technological application. Since the ESR frequency is directly proportional to the dc magnetic field, determining the ESR frequency by its effect on the recombination current can uniquely determine the magnitude of the dc field. We propose that a semiconductor magnetic field sensor can be based on the SDR effect.
1. Lepine, D.J., Spin-Dependent Recombination on Silicon Surface. Physical Review B, 1972. 6(2): p. 436.