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II-VI based magnetic semiconductors (MSs) with a direct and wide optical band gap are expected to show high potential for optical applications utilizing short wavelength laser diodes (LDs), such as 532-nm green and 475-nm blue LDs. II-VI MSs Zn1-xMnxTe and Zn1-xMnxSe exhibit their absorption edges at 428-544 nm and 428-458 nm, respectively. The edge is not so influenced by the Mn concentration, as is typically observed in Cd1-xMnxTe. We have confirmed that the Faraday rotation F in the ZnMnTe films deposited on quartz glass (QG) substrates is large near the absorption edge.