Events

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With the availability of high brightness soft and hard x-ray sources, a new suite of applications of synchrotron radiation based on transverse coherence has emerged. Our own interest has been to combine the benefits of full transverse coherence with the well-established charge and magnetic contrast available near x-ray absorption edges, particularly in the soft x-ray regime, to probe complex magnetic materials and structures. Scattering a coherent beam off material inhomogeneities produces a speckle/diffraction pattern of the specific illuminated region.

Part I: "Biological Fabrication of TiO2-based Photonic Solar Cell Materials through Diatom Cell Culture"

Part II: "Functionalization of Nanopatterned Diatom Biosilica for Photoluminescence Based Biosensor Applications."

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Studies of interlayer magnetic coupling in all-semiconductor superlattices is one of the research topics pursued by the neutron scattering group at our Departmnet. I will explain -- in context of the latest Nobel Prize in physics -- why such studies are interesting and important, and I will present some results obtained from superlattices made of alternating ferromagnetic and nonmagnetic layers or alternating antiferromagnetic and nonmagnetic layers.

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Semiconductor quantum dots attract a growing attention due to perspectives of their application in quantum cryptography and quantum computing. The talk will contain a summary of our recent optical experiments on individual quantum dots. Experimental tools include cw and time-resolved microphotoluminescence, double pulse excitation, and photon correlation measurements. In particular non-classical emission of photons from a single quantum dot, influence and control of quantum dot optical anisotropy, and optical read-out of single electron spin will be presented.

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Current trends in microelectronics are associated with development nanometric scale structures, an integration of opto- and microelectronics elements on Si platform and radical innovations in materials, processes and metrology. In coming decades Si-based CMOS technology will most likely merge with nano-technology resulting in hybrid-type devices. The next generations of devices and technology requires joint efforts of scientists and engineers in physics, chemistry, material sciences, and other related disciplines, and innovations in metrology and materials development.

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