Events

Thin films of wide band-gap semiconductors are deposited by the pulsed laser deposition method. Optimal deposition parameters for the individual compounds are reported. A family of p-type BaCuQF (Q = S, Se, Te) ceramics with a layered crystalline structure is investigated for active and passive device applications. Epitaxial films of BaCuTeF are grown in-situ on single-crystal MgO substrates. These films exhibit a maximum hole mobility of 8 cm2/Vs and conductivity of 167 S/cm. The band gap of BaCuTeF is 3 eV, much higher than 2.3 eV expected from powder results.